Microstructure, growth mechanisms and electro-optical properties of heteroepitaxial GaN layers on sapphire(0001) substrates

Erstveröffentlichung

1996

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Wissenschaftlicher Artikel

Authors

Christiansen, S

Albrecht, M

Dorsch, W

Strunk, HP

ZanottiFregonara, C

et al.

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

Published in

MRS Internet Journal of Nitride Semiconductor Research ; 1 (1996), 1-46. - S. U136-U152Art.-Nr. 19. - ISSN 1092-5783

Keywords

chemical-vapor-deposition; films; donor

Dewey Decimal Group

DDC 620 / Engineering & allied operations

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