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AuthorDaumiller, Idc.contributor.author
AuthorSchmid, Pdc.contributor.author
AuthorKohn, Edc.contributor.author
AuthorKirchner, Cdc.contributor.author
AuthorKamp, Mdc.contributor.author
AuthorEbeling, Karl Joachimdc.contributor.author
AuthorPond, LLdc.contributor.author
AuthorWeitzel, Cdc.contributor.author
Date of accession2018-04-04T08:09:35Zdc.date.accessioned
Available in OPARU since2018-04-04T08:09:35Zdc.date.available
Date of first publication1999dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleDC and RF characteristics of AlN/GaN doped channel heterostructure field effect transistordc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Elektronische Bauelemente und Schaltungenuulm.affiliationSpecific
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1049/el:19991041dc.identifier.doiExternal
Source - Title of sourceElectronics Letterssource.title
Source - Place of publicationInstitute of Electrical Engineerssource.publisher
Source - Volume35source.volume
Source - Issue18source.issue
Source - Year1999source.year
Source - From page1588source.fromPage
Source - To page1590source.toPage
Source - ISSN0013-5194source.identifier.issn
Open AccessNouulm.OA
Suitable communityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000082803500063uulm.identifier.wos
University Bibliographyjauulm.unibibliographie


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