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AuthorSuski, Tdc.contributor.author
AuthorJun, Jdc.contributor.author
AuthorLeszczynski, Mdc.contributor.author
AuthorTeisseyre, Hdc.contributor.author
AuthorStrite, Sdc.contributor.author
AuthorRockett, Adc.contributor.author
AuthorPelzmann, Adc.contributor.author
AuthorKamp, Mdc.contributor.author
AuthorEbeling, Karl Joachimdc.contributor.author
Date of accession2018-04-04T08:03:58Zdc.date.accessioned
Available in OPARU since2018-04-04T08:03:58Zdc.date.available
Date of first publication1998dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleOptical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealingdc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1063/1.368118dc.identifier.doiExternal
Source - Title of sourceJournal of Applied Physicssource.title
Source - Place of publicationAmerican Institute of Physicssource.publisher
Source - Volume84source.volume
Source - Issue2source.issue
Source - Year1998source.year
Source - From page1155source.fromPage
Source - To page1157source.toPage
Source - ISSN0021-8979source.identifier.issn
Open AccessNouulm.OA
CommunityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000075257800074uulm.identifier.wos
Bibliographyuulmuulm.bibliographie


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