Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

Erstveröffentlichung

1998

Authors

Suski, T

Jun, J

Leszczynski, M

Teisseyre, H

Strite, S

et al.

Wissenschaftlicher Artikel

Published in

Journal of Applied Physics ; 84 (1998), 2. - S. 1155-1157. - ISSN 0021-8979

Link to publication

https://dx.doi.org/10.1063/1.368118

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

Subject headings

[DDC subject group]: DDC 620 / Engineering & allied operations

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Metadata

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