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Photoluminescence study on GaN homoepitaxial layers grown by molecular beam epitaxy

Erstveröffentlichung
1996
Authors
Teisseyre, H
Nowak, G
Leszczynski, M
Grzegory, I
Bockowski, M
et al.
Wissenschaftlicher Artikel


Published in
MRS Internet Journal of Nitride Semiconductor Research ; 1 (1996), 1-46. - S. U103-U106. - Art.-Nr. 13. - ISSN 1092-5783
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Subject headings
[Free subject headings]: energy-gap
[DDC subject group]: DDC 620 / Engineering & allied operations

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