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AuthorMayer, Mdc.contributor.author
AuthorPelzmann, Adc.contributor.author
AuthorKamp, Mdc.contributor.author
AuthorEbeling, Karl Joachimdc.contributor.author
AuthorTeisseyre, Hdc.contributor.author
AuthorNowak, Gdc.contributor.author
AuthorLeszczynski, Mdc.contributor.author
AuthorGrzegory, Idc.contributor.author
AuthorPorowski, Sdc.contributor.author
AuthorKarczewski, Gdc.contributor.author
Date of accession2018-03-28T13:53:21Zdc.date.accessioned
Available in OPARU since2018-03-28T13:53:21Zdc.date.available
Date of first publication1997dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
KeywordGaNdc.subject
KeywordMBEdc.subject
KeywordNH3dc.subject
Keywordhomoepitaxydc.subject
Keywordon surface crackingdc.subject
KeywordFLdc.subject
Keywordexcitondc.subject
Keywordenergy-gapdc.subject
Keywordluminescencedc.subject
Keywordspectradc.subject
Keywordlayersdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleHigh quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface crackingdc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
Source - Title of sourceJapanese Journal of Applied Physicssource.title
Source - Place of publicationJapan Society of Applied Physicssource.publisher
Source - Volume36source.volume
Source - Issue12Bsource.issue
Source - Year1997source.year
Source - From pageL1634source.fromPage
Source - To pageL1636source.toPage
Open AccessNouulm.OA
Suitable communityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000071341800004uulm.identifier.wos
University Bibliographyjauulm.unibibliographie


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