High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

1997

Wissenschaftlicher Artikel

Mayer, M

Pelzmann, A

Kamp, M

Ebeling, Karl Joachim

Teisseyre, H

et al.

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institut für Optoelektronik

Japanese Journal of Applied Physics ; 36 (1997), 12B. - S. L1634-L1636

GaN; MBE; NH3; homoepitaxy; on surface cracking; FL; exciton; energy-gap; luminescence; spectra; layers

DDC 620 / Engineering & allied operations