High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Erstveröffentlichung
1997
Authors
Mayer, M
Pelzmann, A
Kamp, M
Ebeling, Karl Joachim
Teisseyre, H
et al.
Wissenschaftlicher Artikel


Published in
Japanese Journal of Applied Physics ; 36 (1997), 12B. - S. L1634-L1636
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Subject headings
[Free subject headings]: GaN | MBE | NH3 | homoepitaxy | on surface cracking | FL | exciton | energy-gap | luminescence | spectra | layers
[DDC subject group]: DDC 620 / Engineering & allied operations
Metadata
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