High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Erstveröffentlichung
1997
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Authors
Mayer, M
Pelzmann, A
Kamp, M
Ebeling, Karl Joachim
Teisseyre, H
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Published in
Japanese Journal of Applied Physics ; 36 (1997), 12B. - S. L1634-L1636
Keywords
GaN; MBE; NH3; homoepitaxy; on surface cracking; FL; exciton; energy-gap; luminescence; spectra; layers
Dewey Decimal Group
DDC 620 / Engineering & allied operations
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