High quality homoepitaxial GaN grown by molecular beam epitaxy with NH3 on surface cracking

Erstveröffentlichung

1997

Authors

Mayer, M

Pelzmann, A

Kamp, M

Ebeling, Karl Joachim

Teisseyre, H

et al.

Wissenschaftlicher Artikel

Published in

Japanese Journal of Applied Physics ; 36 (1997), 12B. - S. L1634-L1636

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

Subject headings

[Free subject headings]: GaN | MBE | NH3 | homoepitaxy | on surface cracking | FL | exciton | energy-gap | luminescence | spectra | layers
[DDC subject group]: DDC 620 / Engineering & allied operations

Metadata

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