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AuthorPelzmann, Adc.contributor.author
AuthorMayer, Mdc.contributor.author
AuthorKirchner, Cdc.contributor.author
AuthorSowada, Ddc.contributor.author
AuthorRotter, Tdc.contributor.author
AuthorKamp, Mdc.contributor.author
AuthorEbeling, Karl Joachimdc.contributor.author
AuthorChristiansen, Sdc.contributor.author
AuthorAlbrecht, Mdc.contributor.author
AuthorStrunk, HPdc.contributor.author
AuthorHollander, Bdc.contributor.author
AuthorMantl, Sdc.contributor.author
Date of accession2018-03-28T13:04:47Zdc.date.accessioned
Available in OPARU since2018-03-28T13:04:47Zdc.date.available
Date of first publication1996dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleDetermination of the dislocation densities in GaN on c-oriented sapphiredc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
Source - Title of sourceMRS Internet Journal of Nitride Semiconductor Researchsource.title
Source - Place of publicationMaterials Research Societysource.publisher
Source - Volume1source.volume
Source - Issue1-46source.issue
Source - Year1996source.year
Source - From pageU313source.fromPage
Source - To pageU320source.toPage
Source - Article number40source.articleNumber
Source - ISSN1092-5783source.identifier.issn
Open AccessNouulm.OA
CommunityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoSA1996WY82100040uulm.identifier.wos
Bibliographyuulmuulm.bibliographie


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