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Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance

Erstveröffentlichung
1999
Authors
Schwegler, V
Schad, SS
Kirchner, C
Seyboth, M
Kamp, M
et al.
Beitrag zu einer Konferenz


Published in
Physica Status Solidi a Applied Research ; 176 (1999), 1. - S. 783-786. - ISSN 0031-8965
Link to publication
https://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<783::AID-PSSA783>3.3.CO;2-Q
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
Halbleiterphysik
Conference
3rd International Conference on Nitride Semiconductors (ICNS 99), 1999-07-05 - 1999-07-09, Montpellier, France
Subject headings
[DDC subject group]: DDC 620 / Engineering & allied operations

Metadata
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