Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance
Beitrag zu einer Konferenz
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieFakultät für Naturwissenschaften
Institutions
Institut für OptoelektronikHalbleiterphysik
Published in
Physica Status Solidi a Applied Research ; 176 (1999), 1. - S. 783-786. - ISSN 0031-8965
Link to publication
https://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<783::AID-PSSA783>3.3.CO;2-QConference
3rd International Conference on Nitride Semiconductors (ICNS 99), 1999-07-05 - 1999-07-09, Montpellier, France