Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance

Erstveröffentlichung

1999

Authors

Schwegler, V

Schad, SS

Kirchner, C

Seyboth, M

Kamp, M

et al.

Beitrag zu einer Konferenz

Published in

Physica Status Solidi a Applied Research ; 176 (1999), 1. - S. 783-786. - ISSN 0031-8965

Link to publication

https://dx.doi.org/10.1002/(SICI)1521-396X(199911)176:1<783::AID-PSSA783>3.3.CO;2-Q

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften

Institutions

Institut für Optoelektronik
Halbleiterphysik

Conference

3rd International Conference on Nitride Semiconductors (ICNS 99), 1999-07-05 - 1999-07-09, Montpellier, France

Subject headings

[DDC subject group]: DDC 620 / Engineering & allied operations

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Metadata

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