High-performance oxide-confined GaAs VCSEL's

Erstveröffentlichung
1997
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Beitrag zu einer Konferenz


Authors
Weigl, B
Grabherr, M
Jung, C
Jager, R
Reiner, G
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Published in
IEEE Journal of Selected Topics in Quantum Electronics ; 3 (1997), 2. - S. 409-415. - ISSN 1077-260X
Link to publication
https://dx.doi.org/10.1109/2944.605686
Conference
15th IEEE International Semiconductor Laser Conference (HAIFA 1996 ISLC), 1996-10-13 - 1996-10-18, Haifa, Israel
Keywords
high efficiency; MBE growth; semiconductor laser; temperature range; vertical-cavity laser; surface-emitting lasers; vertical-cavity lasers; efficiency; oxidation; epitaxy
Dewey Decimal Group
DDC 620 / Engineering & allied operations
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