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AuthorKirchner, Cdc.contributor.author
AuthorSchwegler, Vdc.contributor.author
AuthorEberhard, Fdc.contributor.author
AuthorKamp, Mdc.contributor.author
AuthorEbeling, Karl Joachimdc.contributor.author
AuthorPrystawko, Pdc.contributor.author
AuthorLeszczynski, Mdc.contributor.author
AuthorGrzegory, Idc.contributor.author
AuthorPorowski, Sdc.contributor.author
Date of accession2017-12-19T06:42:57Zdc.date.accessioned
Available in OPARU since2017-12-19T06:42:57Zdc.date.available
Date of first publication2000dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Keywordthreading dislocationsdc.subject
Keywordlaser-diodesdc.subject
Keywordenergy-gapdc.subject
Keywordreflectancedc.subject
Keywordlayersdc.subject
Keywordphotoluminescencedc.subject
Keywordscatteringdc.subject
Keywordfilmsdc.subject
Keywordbulkdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleMOVPE homoepitaxy of high-quality GaN: Crystal growth and devicesdc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1016/S0960-8974(00)00044-9dc.identifier.doiExternal
Source - Title of sourceProgress in Crystal Growth and Characterization of Materialssource.title
Source - Place of publicationPergamon-Elsevier Sciencesource.publisher
Source - Volume41source.volume
Source - Issue1-4source.issue
Source - Year2000source.year
Source - From page57source.fromPage
Source - To page83source.toPage
Source - ISSN0960-8974source.identifier.issn
Open AccessNouulm.OA
Suitable communityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000166685200002uulm.identifier.wos
University Bibliographyjauulm.unibibliographie


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