Optimization of nucleation and buffer layer growth for improved GaN quality

Erstveröffentlichung

2007

Authors

Hertkorn, Joaquim

Brückner, Peter

Thapa, Sarad B..

Wunderer, Thomas

Scholz, Felix

et al.

Wissenschaftlicher Artikel

Published in

Journal of Crystal Growth ; 308 (2007), 1. - S. 30-36. - ISSN 0022-0248. - eISSN 1873-5002

Link to publication

https://dx.doi.org/10.1016/j.jcrysgro.2007.07.056

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik
Institut für Halbleiterphysik

Subject headings

[Free subject headings]: atomic force microscopy | high resolution x-ray diffraction | nucleation | metalorganic vapor phase epitaxy | nitrides | high electron mobility transistors | EPITAXIAL LATERAL OVERGROWTH | ALGAN/GAN HETEROSTRUCTURES | THREADING DISLOCATIONS | SAPPHIRE SUBSTRATE | ELECTRON-GAS | X-RAY | MOBILITY | SURFACE | GAN/ALGAN | DENSITY
[DDC subject group]: DDC 500 / Natural sciences & mathematics | DDC 530 / Physics | DDC 620 / Engineering & allied operations

Metadata

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