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AuthorGopalakrishnan, Selvidc.contributor.author
Date of accession2016-03-14T13:39:19Zdc.date.accessioned
Available in OPARU since2016-03-14T13:39:19Zdc.date.available
Year of creation2005dc.date.created
AbstractThis work probed at the atomic level, processes that occur during the Ge three dimensional island formation and on ultrathin SixGe1-x epitaxial growth by chemical vapour deposition on the Si(111)-(7x7) substrate with the aid of surface probe techniques such as STM and AFM, XPS, as well as TEM imaging of any 3D island formation. This work could essentially be divided into two parts. The first part studied the growth of the strained Ge on Si system with emphasis on the characterization of the CVD grown three dimensional germanium islands on a standard Si(111)-(7x7) substrate as well as on a surface modified Si(111)-(7x7) substrate. The characterization was carried out using a combination of techniques. XPS was used to calculate the effective coverages of deposited germanium, the STM was used to image the top most layers whenever possible and AFM, cross-sectional TEM and HRTEM to image the three dimensional islands. The possible causes of the surface modification were also examined. In the second part of this work the growth morphologies ultrathin SixGe1-x layers grown on the Si(111)-(7x7) substrate at 750 K where the hydrogen desorption rate from the Si(111) surface is low and at 850 K which was the temperature at which the rate of hydrogen desorption from the Si(111) surface was a maximum were investigated. In addition modelling of ultrathin layer growth was carried out using two existing growth models.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
LicenseStandard (Fassung vom 03.05.2003)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v1dc.rights.uri
KeywordGe 3D Islandsdc.subject
KeywordSiGe ultrathin layersdc.subject
Dewey Decimal GroupDDC 530 / Physicsdc.subject.ddc
LCSHAtomic force microscopydc.subject.lcsh
LCSHChemical vapor depositiondc.subject.lcsh
LCSHGermanium compoundsdc.subject.lcsh
LCSHScanning tunneling microscopydc.subject.lcsh
LCSHThin filmsdc.subject.lcsh
LCSHTransmission electron microscopydc.subject.lcsh
LCSHX-ray photoelectron spectroscopydc.subject.lcsh
TitleStudy of three dimensional germanium islands and ultrathin SixGe1-x films grown by chemical vapour deposition on Si(111)-(7x7)dc.title
Resource typeDissertationdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-437dc.identifier.doi
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-54518dc.identifier.urn
GNDCVD-Verfahrendc.subject.gnd
GNDDurchstrahlungselektronenmikroskopiedc.subject.gnd
GNDKraftmikroskopiedc.subject.gnd
GNDRastertunnelmikroskopiedc.subject.gnd
FacultyFakultät für Naturwissenschaftenuulm.affiliationGeneral
Date of activation2005-12-20T18:17:43Zuulm.freischaltungVTS
Peer reviewneinuulm.peerReview
Shelfmark print versionZ: J-H 10.989 ; W: W-H 8.936uulm.shelfmark
DCMI TypeTextuulm.typeDCMI
VTS-ID5451uulm.vtsID
CategoryPublikationenuulm.category
University Bibliographyjauulm.unibibliographie


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