Browsing Publikationsnachweise by Institution "Halbleiterphysik"

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Homoepitaxial growth of GaN by metalorganic vapor phase epitaxy: A benchmark for GaN technology

Kirchner, C et al. (1999)

Wissenschaftlicher Artikel
Ohmic heating of InGaN LEDs during operation: Determination of the junction temperature and its influence on device performance

Schwegler, V et al. (1999)

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