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AuthorPrinz, Günther M.dc.contributor.author
AuthorFeneberg, Martindc.contributor.author
AuthorSchirra, Martindc.contributor.author
AuthorSauer, Rolfdc.contributor.author
AuthorThonke, Klausdc.contributor.author
AuthorThapa, Sarad B.dc.contributor.author
AuthorScholz, Ferdinanddc.contributor.author
Date of accession2022-06-29T08:42:32Zdc.date.accessioned
Available in OPARU since2022-06-29T08:42:32Zdc.date.available
Date of first publication2008dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
KeywordALNdc.subject
Dewey Decimal GroupDDC 530 / Physicsdc.subject.ddc
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleSilicon-doping induced strain of AIN layers: a comparative luminescence and Raman studydc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
FacultyFakultät für Naturwissenschaftenuulm.affiliationGeneral
InstitutionInstitut für Halbleiterphysikuulm.affiliationSpecific
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1002/pssr.200802155dc.identifier.doiExternal
Source - Title of sourcePhysica status solidi (RRL) - Rapid Research Letters (RRL)source.title
Source - Place of publicationWiley-VCH Verlagsource.publisher
Source - Volume2source.volume
Source - Issue5source.issue
Source - Year2008source.year
Source - From page215source.fromPage
Source - To page217source.toPage
Source - ISSN1862-6254source.identifier.issn
Source - eISSN1862-6270source.identifier.eissn
CommunityFakultät für Naturwissenschaftenuulm.community
CommunityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000261000600031uulm.identifier.wos
Bibliographyuulmuulm.bibliographie


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