Magnetic anisotropy in (Ga,Mn)As: Influence of epitaxial strain and hole concentration

Erstveröffentlichung

2009

Authors

Glunk, Michael

Daeubler, Juergen

Dreher, Lukas

Schwaiger, Stephan

Schoch, Wladimir

et al.

Wissenschaftlicher Artikel

Published in

Physical Review B ; 79 (2009), 19. - Art.-Nr. 195206. - ISSN 2469-9950. - eISSN 2469-9969

Link to publication

https://dx.doi.org/10.1103/PhysRevB.79.195206

Institutions

Institut für Halbleiterphysik

Subject headings

[Free subject headings]: Curie temperature | free energy | gallium arsenide | galvanomagnetic effects | III-V semiconductors | lattice constants | magnetic anisotropy | magnetostriction | semiconductor epitaxial layers | stress-strain relations | Zener effect | TRANSPORT-PROPERTIES | FERROMAGNETIC SEMICONDUCTORS | GA1-XMNXAS | SPINTRONICS | LAYERS | MN)AS | GAAS | (GA
[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations

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