Highly conductive modulation doped composition graded p-AlGaN/(AlN)/GaN multiheterostructures grown by metalorganic vapor phase epitaxy

Erstveröffentlichung

2009

Authors

Hertkorn, Joaquim

Thapa, Sarad B.

Wunderer, Thomas

Scholz, Ferdinand

Wu, Zong-Han

et al.

Wissenschaftlicher Artikel

Published in

Journal of Applied Physics ; 106 (2009), 1. - Art.-Nr. 013720. - ISSN 0021-8979. - eISSN 1089-7550

Link to publication

https://dx.doi.org/10.1063/1.3160312

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

Subject headings

[Free subject headings]: aluminium compounds | electrical conductivity | electroluminescence | electron holography | gallium compounds | Hall effect | hole density | hole mobility | III-V semiconductors | light emitting diodes | MOCVD | reflectometry | semiconductor heterojunctions | valence bands | vapour phase epitaxial growth | wide band gap semiconductors | X-ray diffraction | X-ray reflection | ALGAN/GAN SUPERLATTICES | GAN | HETEROSTRUCTURES | TRANSPORT | SEMICONDUCTORS | NUCLEATION | SAPPHIRE | QUALITY | LAYER
[DDC subject group]: DDC 530 / Physics

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