Combining diamond electrodes with GaN heterostructures for harsh environment ISFETs

Erstveröffentlichung
2009Authors
Dipalo, Michele
Gao, Z.
Scharpf, Jochen
Pietzka, Carsten
Alomari, Mohammed
Beitrag zu einer Konferenz
Published in
Diamond and Related Materials ; 18 (2009), 5-8, SI. - S. 884-889. - ISSN 0925-9635. - eISSN 1879-0062
Link to publication
https://dx.doi.org/10.1016/j.diamond.2009.01.011Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieInstitutions
Institut für Elektronische Bauelemente und SchaltungenConference
19th European Conference on Diamond, Diamond-Like Materials, Carbon Nanotubes, Nitrides and Silicon Garbide, 2008-09-07 - 2008-09-11, Sitges
Subject headings
[Free subject headings]: Electrochemistry | Boron doped NCD | GaN heterostructure | PH SENSOR | TRANSISTOR | DEVICES[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations