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AuthorMaier, Daviddc.contributor.author
AuthorAlomari, Mohammeddc.contributor.author
AuthorKohn, Erharddc.contributor.author
AuthorDiforte-Poisson, Marie-Antoinettedc.contributor.author
AuthorDua, Christiandc.contributor.author
AuthorDelage, Sylvain L.dc.contributor.author
AuthorGrandjean, Nicolasdc.contributor.author
AuthorCarlin, Jean-Francoisdc.contributor.author
AuthorChuvilin, Andreydc.contributor.author
AuthorKaiser, Utedc.contributor.author
AuthorTroadec, Daviddc.contributor.author
AuthorGaquière, Christophedc.contributor.author
Date of accession2016-03-15T11:04:23Zdc.date.accessioned
Available in OPARU since2016-03-15T11:04:23Zdc.date.available
Year of creation2010dc.date.created
AbstractThe temperature stability of InAlN/GaN heterostructure FETs has been tested by a stepped temperature test routine under large signal operation conditions. Devices have been successfully operated up to 900 °C for 50 hrs. Failure is thought to be contact metallization related, indicating an extremely robust InAlN/GaN heterostructure.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://ieeexplore.ieee.org/stamp/stamp.jsp?tp=&arnumber=5540502&isnumber=5540324dc.relation.uri
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordGaN heterostructuresdc.subject
KeywordHigh-temperature electronicsdc.subject
KeywordInAlN/GaN HEMTdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHModulation-doped field-effect transistorsdc.subject.lcsh
LCSHReliability: Engineeringdc.subject.lcsh
TitleHigh temperature stability of nitride-based power HEMTsdc.title
Resource typeBeitrag zu einer Konferenzdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-3904dc.identifier.doi
PPN1650895178dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-75442dc.identifier.urn
GNDHEMTdc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Date of activation2011-02-06T23:14:13Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS ID7544uulm.vtsID
CategoryPublikationenuulm.category
Conference name18th International Conference on Microwave, Radar and Wireless Communications (MIKON 2010)uulm.conferenceName
Conference placeVilniusuulm.conferencePlace
Conference start date2010-06-14uulm.conferenceStartDate
Conference end date2010-06-16uulm.conferenceEndDate
Bibliographyuulmuulm.bibliographie


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