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AuthorGrünenpütt, Jan Erikdc.contributor.author
Date of accession2016-03-15T11:04:19Zdc.date.accessioned
Available in OPARU since2016-03-15T11:04:19Zdc.date.available
Year of creation2009dc.date.created
AbstractThe W-band ranging from 75 to 110 GHz marks a frequency window of low atmospheric absorption with the minimum at 94 GHz, suited for high bandwidth data transmission and radar applications. In this work, pseudomorphic and metamorphic HEMT-technologies have been developed compatible with the 4"-fabrication environment of United Monolithic Semiconductors. Besides the progression of the pHEMT-technology by down scaling of the gate length to 80 nm, two single recess and one double recess metamorphic HEMT-technology on GaAs substrate have been developed to improve the RF-gain of the active device. Device processing is discussed with respect to production worthiness starting with the epitaxy layer sequence, ohmic contact formation, the T-gate technology, recess formation and device passivation. Based on device modelling, low-noise amplifiers and power amplifiers have been fabricated to demonstrate the transistor performance on MMIC-level including the evaluation of fabrication yield. The 80 nm pseudomorphic HEMT-technology can address the W-band regarding low-noise and power applications. Compared to the metamorphic power technologies, the pseudomorphic HEMT is less sensitive to impact ionization and provides higher output power densities up to 900 mW/mm. However, the low bandgap metamorphic technologies are the right choice to target for even higher frequencies up to 300 GHz, especially for low-noise thanks to superior small signal gain.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
LicenseStandard (Fassung vom 01.10.2008)dc.rights
Link to license texthttps://oparu.uni-ulm.de/xmlui/license_v2dc.rights.uri
KeywordDouble recessdc.subject
KeywordGaAsdc.subject
KeywordHEMT, high-electron-mobility transistordc.subject
KeywordLow-noisedc.subject
KeywordPower applicationdc.subject
KeywordSingle recessdc.subject
KeywordT-gatedc.subject
KeywordW-banddc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHModulation-doped field-effect transistorsdc.subject.lcsh
TitlePseudomorphic and metamorphic HEMT-technologies for industrial W-band low-noise and power applicationsdc.title
Resource typeDissertationdc.type
DOIhttp://dx.doi.org/10.18725/OPARU-3890dc.identifier.doi
PPN621070416dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-72002dc.identifier.urn
GNDGalliumarsenid-Feldeffekttransistordc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Date of activation2010-02-22T14:26:50Zuulm.freischaltungVTS
Peer reviewneinuulm.peerReview
Shelfmark print versionZ: J-H 13.561; W: W-H 11.994uulm.shelfmark
DCMI TypeTextuulm.typeDCMI
VTS-ID7200uulm.vtsID
CategoryPublikationenuulm.category
University Bibliographyjauulm.unibibliographie


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