Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung
Dissertation
Faculties
Fakultät für IngenieurwissenschaftenAbstract
This document, written in German, talks about the theory of group III-Nitrides and combines the polar nature of the material with the FET performance. Beside theory, real HEMT structures are realized, including InAlN based FETs.
Date created
2006
Subject Headings
Feldeffekttransistor [GND]Galliumnitrid [GND]
HEMT [GND]
Field-effect transistors [LCSH]
Gallium nitride [LCSH]
Keywords
InAINDewey Decimal Group
DDC 620 / Engineering & allied operationsMetadata
Show full item recordCitation example
Neuburger, Martin (2006): Entwurf und Technologie von GaN-Heterostruktur FETs für hohe Leistung. Open Access Repositorium der Universität Ulm. Dissertation. http://dx.doi.org/10.18725/OPARU-364