Improved quantum efficiency of 350 nm LEDs grown on low dislocation density AlGaN buffer layers

Erstveröffentlichung
2011
Authors
Kunzer, Michael
Gutt, Richard
Kirste, Lutz
Passow, Thorsten
Forghani, Kamran
et al.
Beitrag zu einer Konferenz


Published in
Physica status solidi C, Current topics in solid state physics. - Weinheim : Wiley-VCH Verlag, 2011. - (Physica Status Solidi C-Current Topics in Solid State Physics ; 8). - ISSN 1862-6351
Link to publication
https://dx.doi.org/10.1002/pssc.201001052
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Conference
International Workshop on Nitride Semiconductors (IWN)/Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium N/Symposium H, 2010-09-19 - 2010-09-24, Tampa
Subject headings
[Free subject headings]: AlGaN | dislocations | GaN | light emitting diodes | photoluminescence | quantum efficiency | UV | LIGHT-EMITTING-DIODES
[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations
Metadata
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