In-situ deposited SiNx nanomask for crystal quality improvement in AlGaN

Erstveröffentlichung
2011
Authors
Forghani, Kamran
Gharavipour, Mohammadreza
Klein, Martin
Scholz, Ferdinand
Klein, Oliver
et al.
Beitrag zu einer Konferenz


Published in
Physica status solidi C, Current topics in solid state physics. - Weinheim : Wiley-VCH Verlag, 2011. - (Physica Status Solidi C-Current Topics in Solid State Physics ; 8). - ISSN 1862-6351
Link to publication
https://dx.doi.org/10.1002/pssc.201001074
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
ZE Elektronenmikroskopie
Institut für Quantenmaterie
Conference
International Workshop on Nitride Semiconductors (IWN)/Fall Meeting of the European-Materials-Research-Society (E-MRS)/Symposium N/Symposium H, 2010-09-19 - 2010-09-24, Tampa
Subject headings
[Free subject headings]: AlGaN | SiNx nanomask | MOVPE | dislocation reduction | DISLOCATION DENSITY | GAN | OPTIMIZATION | NUCLEATION | REDUCTION | GROWTH | LAYERS
[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations
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