Indium incorporation in GaInN/GaN quantum well structures on polar and nonpolar surfaces

Erstveröffentlichung
2011Authors
Jönen, Holger
Rossow, Uwe
Bremers, Heiko
Hoffmann, Lars
Brendel, Moritz
Wissenschaftlicher Artikel
Published in
physica status solidi (b) ; 248 (2011), 3. - S. 600-604. - ISSN 0370-1972
Link to publication
https://dx.doi.org/10.1002/pssb.201046334Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieInstitutions
Institut für OptoelektronikSubject headings
[Free subject headings]: GaInN | metal-organic vapor phase epitaxy | photoluminescence | quantum wells | X-ray diffraction | LIGHT-EMITTING-DIODES | M-PLANE | SUBSTRATE MISCUT | STACKING-FAULTS | GAN | FIELDS | IMPACT[DDC subject group]: DDC 530 / Physics