• English
    • Deutsch
  • English 
    • English
    • Deutsch
  • Login
View Item 
  •   Home
  • Universität Ulm
  • Publikationsnachweise
  • View Item
  •   Home
  • Universität Ulm
  • Publikationsnachweise
  • View Item
JavaScript is disabled for your browser. Some features of this site may not work without it.

Investigations on Si-doped AlGaN: Below and above the Mott density

Erstveröffentlichung
2012
Authors
Forghani, Kamran
Gharavipour, Mohammadreza
Scholz, Ferdinand
Thonke, Klaus
Beitrag zu einer Konferenz


Published in
physica status solidi (c) ; 9 (2012), 3-4. - S. 492-495. - ISSN 1862-6351
Link to publication
https://dx.doi.org/10.1002/pssc.201100481
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
Institut für Quantenmaterie
Conference
9th International Conference on Nitride Semiconductors (ICNS), 2011-07-10 - 2011-07-15, Glasgow
Subject headings
[Free subject headings]: AlGaN | Si doping | Mott transition | Hall-effect measurement | donor ionization (activation) energy | MOVPE | QUALITY | GROWTH | DONORS | LAYER | GAN
[DDC subject group]: DDC 500 / Natural sciences & mathematics | DDC 530 / Physics

Metadata
Show full item record

Policy | kiz service OPARU | Contact Us
Impressum | Privacy statement
 

 

Advanced Search

Browse

All of OPARUCommunities & CollectionsPersonsInstitutionsPublication typesUlm SerialsDewey Decimal ClassesEU projects UlmDFG projects UlmOther projects Ulm

My Account

LoginRegister

Statistics

View Usage Statistics

Policy | kiz service OPARU | Contact Us
Impressum | Privacy statement