Investigations on Si-doped AlGaN: Below and above the Mott density

Erstveröffentlichung
2012
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Authors
Forghani, Kamran
Gharavipour, Mohammadreza
Scholz, Ferdinand
Thonke, Klaus
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
Institut für Quantenmaterie
Published in
physica status solidi (c) ; 9 (2012), 3-4. - S. 492-495. - ISSN 1862-6351
Link to publication
https://dx.doi.org/10.1002/pssc.201100481
Conference
9th International Conference on Nitride Semiconductors (ICNS), 2011-07-10 - 2011-07-15, Glasgow
Keywords
AlGaN; Si doping; Mott transition; Hall-effect measurement; donor ionization (activation) energy; MOVPE; QUALITY; GROWTH; DONORS; LAYER; GAN
Dewey Decimal Group
DDC 500 / Natural sciences & mathematics
DDC 530 / Physics
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