Investigations on Si-doped AlGaN: Below and above the Mott density
Erstveröffentlichung
2012
Beitrag zu einer Konferenz
Published in
physica status solidi (c) ; 9 (2012), 3-4. - S. 492-495. - ISSN 1862-6351
Link to publication
https://dx.doi.org/10.1002/pssc.201100481Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieFakultät für Naturwissenschaften
Institutions
Institut für OptoelektronikInstitut für Quantenmaterie
Conference
9th International Conference on Nitride Semiconductors (ICNS), 2011-07-10 - 2011-07-15, Glasgow
Subject headings
[Free subject headings]: AlGaN | Si doping | Mott transition | Hall-effect measurement | donor ionization (activation) energy | MOVPE | QUALITY | GROWTH | DONORS | LAYER | GAN[DDC subject group]: DDC 500 / Natural sciences & mathematics | DDC 530 / Physics