InAlN/GaN HEMTs for Operation in the 1000 degrees C Regime: A First Experiment

Erstveröffentlichung
2012
Authors
Maier, D.
Alomari, M.
Grandjean, N.
Carlin, J. -F.
Diforte-Poisson, M. -A.
et al.
Wissenschaftlicher Artikel


Published in
IEEE Electron Device Letters ; 33 (2012), 7. - S. 985-987. - ISSN 0741-3106. - eISSN 1558-0563
Link to publication
https://dx.doi.org/10.1109/LED.2012.2196972
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Elektronische Bauelemente und Schaltungen
EU Project uulm
MORGAN / Materials for Robust Gallium Nitride / EC / FP7 / 214610
Subject headings
[Free subject headings]: Gallium nitride (GaN) heterostructures | high-temperature electronics | InAlN/GaN HEMT | reliability | DEVICES
[DDC subject group]: DDC 620 / Engineering & allied operations
Metadata
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