Untersuchungen zur Metallabscheidung auf Si(111)-Elektroden

Abstract

The metal/semiconductor-interface is investigated with in-situ and ex-situ techniques namely cyclovoltammetry (CV), scanning tunneling microscopy (STM), atomic force microscopy (AFM) and x-ray photoelectron spectroscopy (XPS). The interfaces are shown to be very important in determining the (photo)electrochemical activity of the system. Furthermore grafting of silicon surfaces with organic molecules includes pyridine terminated surfaces, having the ability to complex Pd-ions form solution which can be electrochemically reduced in a subsequent step to obtain semiconductor/molecule/metal-sandwichstructures.