Epitaxial growth and characterization of coaxial GaN/InGaN/GaN nano-structures
Auch gedruckt in der BibliothekW: W-H 14.087
FakultätFakultät für Ingenieurwissenschaften und Informatik
Ressourcen- / MedientypDissertation, Text
Datum der Freischaltung2015-02-27
The development of a fabrication process for highly crystalline and position controlled GaN based nano- and submicron-structures together with the respective coaxial InGaN quantum well overgrowth was the focus of this work. Well ordered ZnO nano-rods were used as a growth template to realize GaN structures with the same shape and configuration. A multi-layer GaN/ZnO overgrowth approach in MOVPE for the complete desorption of the ZnO core pillars and achieving GaN tubes of fair crystalline qualities has proven to be very successful using SEM, PL and TEM investigations. Hollow GaN tubes with wall thicknesses ranging between 40 nm and 300 nm were achieved. For position and density control, successful growth of single ZnO nano-rods on the top-plateau of single GaN pyramids was achieved. The respective InGaN QW overgrowth was achieved with homogeneous InGaN layers of 7% In content. Quenching of the optical intensity during switching from argon to oxygen ambient under continuous excitation in a micro-PL setup demonstrated their suitability as possible sensing elements.
Light emitting diodes
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