Show simple item record

AuthorRahman, SK. Shaid-Urdc.contributor.author
AuthorLeute, Robert Anton Richarddc.contributor.author
AuthorWang, Junjundc.contributor.author
AuthorMeisch, Tobiasdc.contributor.author
AuthorKlein, Martindc.contributor.author
AuthorScholz, Ferdinanddc.contributor.author
AuthorKoyama, Kojidc.contributor.author
AuthorIshii, Mihodc.contributor.author
AuthorTakeda, Hidetoshidc.contributor.author
Date of accession2016-03-15T10:39:53Zdc.date.accessioned
Available in OPARU since2016-03-15T10:39:53Zdc.date.available
Year of creation2014dc.date.created
AbstractWe demonstrate the strong influence of GaN substrate surface morphology on optical properties and performance of light emitting devices grown on freestanding GaN. As-grown freestanding HVPE GaN substrates show excellent AFM RMS and XRD FWHM values over the whole area, but distinctive features were observed on the surface, such as macro-pits, hillocks and facets extending over several millimeters. Electroluminescence measurements reveal a strong correlation of the performance and peak emission wavelength of LEDs with each of these observed surface features. This results in multiple peaks and non-uniform optical output power for LEDs on as-grown freestanding GaN substrates. Removal of these surface features by chemical mechanical polishing results in highly uniform peak wavelength and improved output power over the whole wafer area.dc.description.abstract
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
ID of original publ.http://scitation.aip.org/content/aip/journal/adva/4/7/10.1063/1.4890348dc.relation.uri
LicenseCC BY 3.0 Unporteddc.rights
Link to license texthttp://creativecommons.org/licenses/by/3.0/dc.rights.uri
KeywordBulk substratesdc.subject
KeywordEfficiencydc.subject
KeywordGaNdc.subject
KeywordHVPEdc.subject
KeywordLEDdc.subject
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
LCSHGallium nitridedc.subject.lcsh
TitleLEDs on HVPE grown GaN substrates: influence of macroscopic surface featuresdc.title
Resource typeWissenschaftlicher Artikeldc.type
DOIhttp://dx.doi.org/10.18725/OPARU-3206dc.identifier.doi
PPN1659212995dc.identifier.ppn
URNhttp://nbn-resolving.de/urn:nbn:de:bsz:289-vts-92209dc.identifier.urn
GNDGalliumnitriddc.subject.gnd
FacultyFakultät für Ingenieurwissenschaften und Informatikuulm.affiliationGeneral
Citation of original publ.AIP advances 4, 077119 (2014)uulm.citationOrigPub
Date of activation2014-09-23T23:39:52Zuulm.freischaltungVTS
Peer reviewjauulm.peerReview
DCMI TypeTextuulm.typeDCMI
VTS ID9220uulm.vtsID
CategoryPublikationenuulm.category
Bibliographyuulmuulm.bibliographie


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record