GaInN-based LED structures on selectively grown semi-polar crystal facets
Erstveröffentlichung
2010
Beitrag zu einer Konferenz
Published in
Physica status solidi - A, Applications and materials science ; 207 (2010), 6. - S. 1407-1413. - ISSN 1862-6300. - eISSN 1862-6319
Link to publication
https://dx.doi.org/10.1002/pssa.200983633Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieFakultät für Naturwissenschaften
Institutions
Institut für OptoelektronikInstitut für Quantenmaterie
ZE Elektronenmikroskopie
Conference
8th International Conference on Nitride Semiconductors (ICNS), 2009-10-18 - 2009-10-23, Jeju
Subject headings
[Free subject headings]: growth | GaInN | LEDs | morphology | selective area epitaxy | EPITAXIAL LATERAL OVERGROWTH | MULTIPLE-QUANTUM WELLS | LIGHT-EMITTING-DIODES | GAN | HETEROSTRUCTURES | RECOMBINATION | POLARIZATION | DEPENDENCE | EFFICIENCY[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations