Fabrication of freestanding 2 `'-GaN wafers by hydride vapour phase epitaxy and self-separation during cooldown
Erstveröffentlichung
2010
Beitrag zu einer Konferenz
Published in
Physica status solidi - A, Applications and materials science ; 207 (2010), 6. - S. 1287-1291. - ISSN 1862-6300. - eISSN 1862-6319
Link to publication
https://dx.doi.org/10.1002/pssa.200983517Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieInstitutions
Institut für OptoelektronikConference
8th International Conference on Nitride Semiconductors (ICNS), 2009-10-18 - 2009-10-23, Jeju
Subject headings
[Free subject headings]: GaN | morphology | patterning | structure | VPE | PROCESS OPTIMIZATION | GAN LAYERS | GROWTH | HVPE[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations