Growth of Bulk GaN and AlN: Progress and Challenges

Erstveröffentlichung
2010
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Wissenschaftlicher Artikel


Authors
Avrutin, Vitaliy
Silversmith, Donald J.
Mori, Yusuke
Kawamura, Fumio
Kitaoka, Yasuo
et al.
Published in
Proceedings of the IEEE ; 98 (2010), 7. - S. 1302-1315. - ISSN 0018-9219. - eISSN 1558-2256
Link to publication
https://dx.doi.org/10.1109/JPROC.2010.2044967
Keywords
Ammonothermal method; GaN; GaN bulk crystals; high-pressure GaN growth; Na flux GaN; NA FLUX METHOD; SINGLE-CRYSTAL GROWTH; HIGH-PRESSURE CRYSTALLIZATION; GALLIUM-NITRIDE; SEEDED GROWTH; SUPERCRITICAL AMMONIA; AMMONOTHERMAL GROWTH; NITROGEN DISSOLUTION; DEVICE FABRICATION; BUFFER LAYER
Dewey Decimal Group
DDC 620 / Engineering & allied operations
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