Raman spectroscopic characterization of epitaxially grown GaN on sapphire

Erstveröffentlichung
2013
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Wissenschaftlicher Artikel


Authors
Röder, Christian
Lipski, Frank
Habel, Frank
Leibiger, Gunnar
Abendroth, Martin
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Published in
Journal of Physics D: Applied Physics ; 46 (2013), 28. - Art.-Nr. 285302. - ISSN 0022-3727
Link to publication
https://dx.doi.org/10.1088/0022-3727/46/28/285302
Keywords
VAPOR-PHASE EPITAXY; III-V NITRIDE; DEFORMATION POTENTIALS; RESIDUAL STRAIN; THERMAL-STRESS; LAYERS; FILMS; SCATTERING; SUBSTRATE; PHOTOLUMINESCENCE
Dewey Decimal Group
DDC 530 / Physics
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