Direct determination of the silicon donor ionization energy in homoepitaxial AlN from photoluminescence two-electron transitions
Erstveröffentlichung
2013
Wissenschaftlicher Artikel
Published in
Applied Physics Letters ; 103 (2013), 12. - Art.-Nr. 122105. - ISSN 0003-6951. - eISSN 1077-3118
Link to publication
https://dx.doi.org/10.1063/1.4821183Faculties
Fakultät für NaturwissenschaftenInstitutions
Institut für QuantenmaterieSubject headings
[Free subject headings]: MOLECULAR-BEAM EPITAXY | SI-DOPED ALN | LIGHT-EMITTING-DIODES | DX-CENTER FORMATION | ALXGA1-XN | CONDUCTION | ALLOYS | FILMS[DDC subject group]: DDC 530 / Physics