Growth and doping of semipolar GaN grown on patterned sapphire substrates

Erstveröffentlichung
2014
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Wissenschaftlicher Artikel


Authors
Scholz, F.
Meisch, T.
Caliebe, M.
Schoerner, S.
Thonke, K.
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
Institut für Quantenmaterie
Published in
Journal of Crystal Growth ; 405 (2014). - S. 97-101. - ISSN 0022-0248. - eISSN 1873-5002
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2014.08.006
EU Project
ALIGHT / AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications / EC / FP7 / 280587
Keywords
Doping; Metalorganic vapor phase epitaxy; Nitrides; Semiconducting III-V materials; DISLOCATION DENSITY; STACKING-FAULTS; REDUCTION; QUALITY; LAYER; OPTIMIZATION; NUCLEATION
Dewey Decimal Group
DDC 620 / Engineering & allied operations
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