Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
Beitrag zu einer Konferenz
Authors
Jetter, M.
Wächter, C.
Meyer, A.
Feneberg, M.
Thonke, K.
Faculties
Fakultät für NaturwissenschaftenInstitutions
Institut für QuantenmateriePublished in
Journal of Crystal Growth ; 315 (2011), 1. - S. 254-257. - ISSN 0022-0248
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2010.10.011Conference
15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, MAY 23-28, 2010, 2010-05-23 - 2010-05-28, Incline Village, NV
Keywords
Characterization; MOVPE; Quaternary nitride semiconductor; EPILAYERS; GROWTHDewey Decimal Group
DDC 500 / Natural sciences & mathematicsDDC 530 / Physics
DDC 620 / Engineering & allied operations