Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission
Beitrag zu einer Konferenz
Faculties
Fakultät für NaturwissenschaftenInstitutions
Institut für QuantenmateriePublished in
Journal of Crystal Growth ; 315 (2011), 1. - S. 254-257. - ISSN 0022-0248
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2010.10.011Conference
15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, MAY 23-28, 2010, 2010-05-23 - 2010-05-28, Incline Village, NV
Keywords
Characterization; MOVPE; Quaternary nitride semiconductor; EPILAYERS; GROWTHDewey Decimal Group
DDC 500 / Natural sciences & mathematicsDDC 530 / Physics
DDC 620 / Engineering & allied operations