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Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Erstveröffentlichung
2011
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Authors
Jetter, M.
Wächter, C.
Meyer, A.
Feneberg, M.
Thonke, K.
et al.
Faculties
Fakultät für Naturwissenschaften
Institutions
Institut für Quantenmaterie
Published in
Journal of Crystal Growth ; 315 (2011), 1. - S. 254-257. - ISSN 0022-0248
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2010.10.011
Conference
15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, MAY 23-28, 2010, 2010-05-23 - 2010-05-28, Incline Village, NV
Keywords
Characterization; MOVPE; Quaternary nitride semiconductor; EPILAYERS; GROWTH
Dewey Decimal Group
DDC 500 / Natural sciences & mathematics
DDC 530 / Physics
DDC 620 / Engineering & allied operations

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