Quaternary AlxInyGa1-x-yN layers deposited by pulsed metal-organic vapor-phase epitaxy for high efficiency light emission

Erstveröffentlichung
2011
Authors
Jetter, M.
Wächter, C.
Meyer, A.
Feneberg, M.
Thonke, K.
et al.
Beitrag zu einer Konferenz


Published in
Journal of Crystal Growth ; 315 (2011), 1. - S. 254-257. - ISSN 0022-0248
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2010.10.011
Faculties
Fakultät für Naturwissenschaften
Institutions
Institut für Quantenmaterie
Conference
15th International Conference on Metalorganic Vapor Phase Epitaxy (ICMOVPE-XV), Incline Village, NV, MAY 23-28, 2010, 2010-05-23 - 2010-05-28, Incline Village, NV
Subject headings
[Free subject headings]: Characterization | MOVPE | Quaternary nitride semiconductor | EPILAYERS | GROWTH
[DDC subject group]: DDC 500 / Natural sciences & mathematics | DDC 530 / Physics | DDC 620 / Engineering & allied operations
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