Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures

Erstveröffentlichung
2011
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Wissenschaftlicher Artikel


Authors
Benediktovitch, A.
Rinaldi, F.
Menzel, Susanne
Saito, K.
Ulyanenkova, T.
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Published in
Physica status solidi : pss. A, Applications and materials science ; 208 (2011), 11. - S. 2539-2543. - ISSN 1862-6300. - eISSN 1862-6319
Link to publication
https://dx.doi.org/10.1002/pssa.201184251
Keywords
high-resolution reciprocal space mapping; partly relaxed semiconductor systems; misfit dislocations; DIFFRACTION
Dewey Decimal Group
DDC 530 / Physics
DDC 620 / Engineering & allied operations
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