Lattice tilt, concentration, and relaxation degree of partly relaxed InGaAs/GaAs structures

Erstveröffentlichung
2011Authors
Benediktovitch, A.
Rinaldi, F.
Menzel, Susanne
Saito, K.
Ulyanenkova, T.
Wissenschaftlicher Artikel
Published in
Physica status solidi : pss. A, Applications and materials science ; 208 (2011), 11. - S. 2539-2543. - ISSN 1862-6300. - eISSN 1862-6319
Link to publication
https://dx.doi.org/10.1002/pssa.201184251Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieInstitutions
Institut für OptoelektronikSubject headings
[Free subject headings]: high-resolution reciprocal space mapping | partly relaxed semiconductor systems | misfit dislocations | DIFFRACTION[DDC subject group]: DDC 530 / Physics | DDC 620 / Engineering & allied operations