Reliability investigation of the degradation of the surface passivation of InAlN/GaN HEMTs using a dual gate structure

Erstveröffentlichung
2012
Metadata only
Search for full text
Beitrag zu einer Konferenz


Authors
Ostermaier, Clemens
Lagger, Peter
Alomari, Mohammed
Herfurth, Patrick
Maier, David
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Elektronische Bauelemente und Schaltungen
Published in
Microelectronics Reliability ; 52 (2012), 9-10, SI. - S. 1812-1815. - ISSN 0026-2714
Link to publication
https://dx.doi.org/10.1016/j.microrel.2012.06.006
Conference
23rd European Symposium on the Reliability of Electron Devices, Failure Physics and Analysis (ESREF), 2012-10-01 - 2012-10-05, Cagliari, Italy
Keywords
INDUCED LEAKAGE CURRENT
Dewey Decimal Group
DDC 530 / Physics
DDC 620 / Engineering & allied operations
Metadata
Show full item record