Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads
Beitrag zu einer Konferenz
FacultiesFakultät für Ingenieurwissenschaften und Informatik
This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance at the desired frequency without having an effect on the switch mechanics. Insertion loss less than 0.25 dB and isolation better than 20 dB are achieved from 30 to 100 GHz. A glass cap with a silicon frame is used to package the switch. Single-pole-double-throw (SPDT) switches and a 24 - 77 GHz reconfigurable LNA is also demonstrated as a first time implementation of single chip BiCMOS reconfigurable circuit at such high frequencies.
Original publication2012 IEEE MTT-S International Microwave Symposium Digest (MTT)
Subject HeadingsBICMOS [GND]
Microelectromechanical devices [LCSH]