RF-MEMS switch module in a 0.25 µm BiCMOS technology

peer-reviewed
Veröffentlichung
2013-06-06Authors
Kaynak, Mehmet
Wietstruck, M.
Zhang, W.
Drews, Jürgen
Scholz, René F.
Beitrag zu einer Konferenz
Faculties
Fakultät für Ingenieurwissenschaften und InformatikConference
IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF), 2012-01-16 - 2012-01-18, Santa Clara, CA
Abstract
A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks:
1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital interface, 4) Flexible packaging. The RF-MEMS switch technology is detailed by focusing on the contact model, especially in the down-state. Electromagnetic (EM) and lumped-element models are demonstrated to integrate into foundry process design kit (PDK). The integrated on-chip HV generation and control circuitries are described. A flexible packaging technique is also introduced to package either standalone switches or circuits with several switches.
Date created
2012
Original publication
Proceedings IEEE 12th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2012), Santa Clara, CA, USA, Jan. 16 - 18, 2012, S. 25 - 28http://dx.doi.org/10.1109/SiRF.2012.6160150
Subject headings
[GND]: BICMOS[LCSH]: Packaging
[Free subject headings]: EM modeling | HV generation | Millimeter wave integrated circuits | Monolithic integration | RF-MEMS switch
[DDC subject group]: DDC 620 / Engineering & allied operations
Metadata
Show full item recordDOI & citation
Please use this identifier to cite or link to this item: http://dx.doi.org/10.18725/OPARU-2477
Kaynak, Mehmet et al. (2013): RF-MEMS switch module in a 0.25 µm BiCMOS technology. Open Access Repositorium der Universität Ulm und Technischen Hochschule Ulm. http://dx.doi.org/10.18725/OPARU-2477
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