U- and V-band signal sources in Si/SiGe technology
Beitrag zu einer Konferenz
Faculties
Fakultät für Ingenieurwissenschaften und InformatikPeer review
ja
Conference
2011 IEEE Semiconductor Conference, 2011-09-27 - 2011-09-28, Dresden
Abstract
A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 mym SiGe:C BiCMOS technology. The VCO oscillates from 48 GHz to 55 GHz, with an output power of around - 1 dBm and a phase noise of - 84 dBc/Hz at 1 MHz offset. The push-push frequency doubler has a minimum loss of 12 dB at 50 GHz for an input power of 6 dBm. It achieves an output power of - 2.4 dBm at 50 GHz and - 5.8 dBm at 75 GHz for an input power of 10 dBm. The VCO is biased at 4 V consuming 36 mA, and the push-push doubler draws 9.4 mA from a 2 V supply.
Date created
2011
Original publication
IEEE Semiconductor Conference Dresden (SCD 2011), Dresden, Germany, Sept. 27 - 28, 2011 (Poster Presentation)http://ieeexplore.ieee.org/xpl/articleDetails.jsp?arnumber=6068698
Subject Headings
Signalquelle [GND]Signals and signaling; Congresses [LCSH]
Dewey Decimal Group
DDC 620 / Engineering & allied operationsMetadata
Show full item recordCitation example
Su, Yinmei et al. (2012): U- and V-band signal sources in Si/SiGe technology. Open Access Repositorium der Universität Ulm. http://dx.doi.org/10.18725/OPARU-2431