MBE Growth of Mid-wave Infrared HgCdTe Layers on GaSb Alternative Substrates

Erstveröffentlichung
2015
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Authors
Lei, W.
Gu, R. J.
Antoszewski, J.
Dell, J.
Neusser, G.
et al.
Faculties
Fakultät für Naturwissenschaften
Institutions
Institut für Analytische und Bioanalytische Chemie
Published in
Journal of Electronic Materials ; 44 (2015), 9. - S. 3180-3187. - ISSN 0361-5235. - eISSN 1543-186X
Link to publication
https://dx.doi.org/10.1007/s11664-015-3876-4
Conference
US Workshop on the Physics and Chemistry of II-VI Materials, 2014-10-20 - 2014-10-23, Baltimore, MD
Funding information
Australian Research Council (ARC) [FT130101708, DP120104835]
DAAD / DAAD-Go8 Joint Research Cooperation Scheme (PPP Australia - Germany)
Faculty of Engineering, Computing and Mathematics at The University of Western Australia
DAAD / DAAD-Go8 Joint Research Cooperation Scheme (PPP Australia - Germany) [57058966]
Australian National Fabrication Facility (ANFF)
Keywords
GaSb; alternative substrate; HgCdTe; MBE
Dewey Decimal Group
DDC 530 / Physics
DDC 620 / Engineering & allied operations
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