Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices

Erstveröffentlichung
2016
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Authors
Buss, Ernst Ronald
Horenburg, Philipp
Rossow, Uwe
Bremers, Heiko
Meisch, Tobias
et al.
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Institutions
Institut für Optoelektronik
Published in
physica status solidi (b) ; 253 (2016), 1. - S. 84-92. - ISSN 0370-1972. - eISSN 1521-3951
Link to publication
https://dx.doi.org/10.1002/pssb.201552354
Keywords
AlInN; lattice-matching; MOVPE; nonpolar; relaxation; semipolar; DISTRIBUTED BRAGG REFLECTORS; 11(2)OVER-BAR2 ORIENTED GAN; RIETVELD-REFINEMENT; NITRIDE
Dewey Decimal Group
DDC 530 / Physics
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