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AuthorWang, Junjundc.contributor.author
AuthorMeisch, Tobiasdc.contributor.author
AuthorHeinz, Dominikdc.contributor.author
AuthorZeller, Raphaeldc.contributor.author
AuthorScholz, Ferdinanddc.contributor.author
Date of accession2019-11-04T09:16:58Zdc.date.accessioned
Available in OPARU since2019-11-04T09:16:58Zdc.date.available
Date of first publication2016dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Dewey Decimal GroupDDC 620 / Engineering & allied operationsdc.subject.ddc
TitleInternal quantum efficiency and carrier injection efficiency of c-plane, 10(1)over-bar1 and 11(2)over-bar2 InGaN/GaN-based-light-emitting diodesdc.title
Resource typeWissenschaftlicher Artikeldc.type
FacultyFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.affiliationGeneral
InstitutionInstitut für Optoelektronikuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.1002/pssb.201552187dc.identifier.doiExternal
Source - Title of sourcePhysica Status Solidi B: Basic Solid State Physicssource.title
Source - Place of publicationWiley-VCH Verlagsource.publisher
Source - Volume253source.volume
Source - Issue1source.issue
Source - Year2016source.year
Source - From page174source.fromPage
Source - To page179source.toPage
Source - ISSN0370-1972source.identifier.issn
Source - eISSN1521-3951source.identifier.eissn
CommunityFakultät für Ingenieurwissenschaften, Informatik und Psychologieuulm.community
WoS000370026800025uulm.identifier.wos
Bibliographyuulmuulm.bibliographie


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