Internal quantum efficiency and carrier injection efficiency of c-plane, 10(1)over-bar1 and 11(2)over-bar2 InGaN/GaN-based-light-emitting diodes

Erstveröffentlichung

2016

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Wissenschaftlicher Artikel

Authors

Wang, Junjun

Meisch, Tobias

Heinz, Dominik

Zeller, Raphael

Scholz, Ferdinand

Faculties

Fakultät für Ingenieurwissenschaften, Informatik und Psychologie

Institutions

Institut für Optoelektronik

Published in

Physica Status Solidi B: Basic Solid State Physics ; 253 (2016), 1. - S. 174-179. - ISSN 0370-1972. - eISSN 1521-3951

Link to publication

https://dx.doi.org/10.1002/pssb.201552187

Funding information

German Federal Ministry of Education and Research (BMBF) in the project Hi-Q-LED [FKZ 13N9977]

Dewey Decimal Group

DDC 620 / Engineering & allied operations

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