Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates.
Wissenschaftlicher Artikel
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und PsychologieFakultät für Naturwissenschaften
Institutions
Institut für OptoelektronikInstitut für Festkörperphysik
Institut für Quantenmaterie
Published in
Journal of Crystal Growth ; 440 (2016). - S. 69-75. - ISSN 0022-0248. - eISSN 1873-5002
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2016.01.014Funding information
European Commission (FP7) within the framework of the project ``AlGaInN materials on semi-polar templates for yellow emission in solid state lighting applications'' (ALIGHT)
Engineering and Physical Sciences Research Council [TS/G001383/1, EP/H019324/1, GR/S49391/01, EP/M010589/1, EP/E035167/1]
Engineering and Physical Sciences Research Council [TS/G001383/1, EP/H019324/1, GR/S49391/01, EP/M010589/1, EP/E035167/1]
Dewey Decimal Group
DDC 500 / Natural sciences & mathematicsDDC 530 / Physics
DDC 620 / Engineering & allied operations