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Influence of trench period and depth on MOVPE grown (11(2)over-bar2) GaN on patterned r-plane sapphire substrates.

Erstveröffentlichung
2016
Authors
Caliebe, Marian
Tandukar, Sushil
Cheng, Zongzhe
Hocker, Matthias
Han, Yisong
et al.
Wissenschaftlicher Artikel


Published in
Journal of Crystal Growth ; 440 (2016). - S. 69-75. - ISSN 0022-0248. - eISSN 1873-5002
Link to publication
https://dx.doi.org/10.1016/j.jcrysgro.2016.01.014
Faculties
Fakultät für Ingenieurwissenschaften, Informatik und Psychologie
Fakultät für Naturwissenschaften
Institutions
Institut für Optoelektronik
Institut für Festkörperphysik
Institut für Quantenmaterie
Subject headings
[DDC subject group]: DDC 500 / Natural sciences & mathematics | DDC 530 / Physics | DDC 620 / Engineering & allied operations

Metadata
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