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AuthorPristovsek, Markusdc.contributor.author
AuthorHumphreys, Colin J.dc.contributor.author
AuthorBauer, Sebastiandc.contributor.author
AuthorKnab, Manueldc.contributor.author
AuthorThonke, Klausdc.contributor.author
AuthorKozlowski, Grzegorzdc.contributor.author
AuthorO'Mahony, Donaghdc.contributor.author
AuthorMaaskant, Pleundc.contributor.author
AuthorCorbett, Briandc.contributor.author
Date of accession2019-10-21T11:41:24Zdc.date.accessioned
Available in OPARU since2019-10-21T11:41:24Zdc.date.available
Date of first publication2016dc.date.issued
Languageendc.language.iso
PublisherUniversität Ulmdc.publisher
Dewey Decimal GroupDDC 530 / Physicsdc.subject.ddc
TitleComparative study of (0001) and (11(2)over-bar2) InGaN based light emitting diodesdc.title
Resource typeBeitrag zu einer Konferenzdc.type
FacultyFakultät für Naturwissenschaftenuulm.affiliationGeneral
InstitutionInstitut für Quantenmaterieuulm.affiliationSpecific
DCMI TypeTextuulm.typeDCMI
CategoryPublikationsnachweiseuulm.category
DOI (external)10.7567/JJAP.55.05FJ10dc.identifier.doiExternal
Source - Title of sourceJapanese Journal of Applied Physicssource.title
Source - PublisherBristolsource.publisherPlace
Source - Place of publicationIOP Publishingsource.publisher
Source - Volume55source.volume
Source - Issue5, SIsource.issue
Source - Year2016source.year
Source - Article number05FJ10source.articleNumber
Source - ISSN0021-4922source.identifier.issn
Source - eISSN1347-4065source.identifier.eissn
Conference name6th International Symposium on Growth of III-Nitrides (ISGN)uulm.conferenceName
Conference placeHamamatsuuulm.conferencePlace
Conference start date2015-11-08uulm.conferenceStartDate
Conference end date2015-11-13uulm.conferenceEndDate
CommunityFakultät für Naturwissenschaftenuulm.community
WoS000374697600074uulm.identifier.wos
Bibliographyuulmuulm.bibliographie


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