Now showing items 21-30 of 61
PLL based fully-integrated LO generation for wideband RF front-ends
(Universität Ulm, 2018-05-16)
This dissertation describes Phase Locked Loop (PLL) based Local Oscillator (LO) designs for RF front-end modules targeting wideband wireless communications systems from microwave to millimeter-wave ranges. With the increase ...
U- and V-band signal sources in Si/SiGe technology
A U-band VCO and a V-band push-push frequency doubler are designed in a 0.25 mym SiGe:C BiCMOS technology. The VCO oscillates from 48 GHz to 55 GHz, with an output power of around - 1 dBm and a phase noise of - 84 dBc/Hz ...
Some studies of quasi-planar antennas
(Universität Ulm, 2016-12-21)
Recent decades have witnessed the rapid evolution of wireless sensing and communication systems aimed at the consumer market. The antenna is a key component in any of these systems, and the selection criteria for a commercial ...
InP-based and metamorphic devices for multifunctional MMICs in mm-wave communication systems
In this paper, the performances of our InP-based and metamorphic HFETs are compared. Measurements on the RF as well as the noise behaviour are presented. Furthermore, first results are demonstrated on the integration of ...
RF-MEMS switch module in a 0.25 µm BiCMOS technology
A BiCMOS embedded RF-MEMS switch module is demonstrated. The module consists of four main blocks: 1) RF-MEMS switch technology, 2) Switch models for design-kit implementation, 3) High Voltage (HV) generation and digital ...
Packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads
This paper presents packaged BiCMOS embedded RF-MEMS switches with integrated inductive loads for frequency tuning at mm-wave frequencies. The developed technique provides easy optimization to maximize the RF performance ...
A 60 to 77 GHz switchable LNA in an RF-MEMS embedded BiCMOS technology
In this letter, a 60 to 77 GHz switchable low-noise amplifier is presented. The IC is realized in a radio frequency microelectro-mechanical systems embedded 0.25 µm SiGe-C BiCMOS technology. Measured results show that the ...
Design and comparison of regenerative dynamic frequency dividers in different configurations using SiGe HBT technology
In this letter, the authors present the design, analysis and comparison of a series of dynamic frequency dividers. These dividers, each consisting of a Gilbert cell mixer core, a transimpedance amplifier and an emitter-follower ...
Multi-Gb/s analog synchronous QPSK demodulator with phase-noise suppression
In this paper, an IF quadrature phase-shift keying demodulator is presented, which performs phase and frequency synchronization in the analog domain. The presented demodulator can be utilized for short-range ultra-wideband ...
This article presented the possibilities of making microwave and mm-wave ICs more intelligent through a combination of established Si/SiGe BiCMOS technologies, which allow for complex ICs combining a multitude of high-speed ...