Now showing items 1-10 of 28
InGaAs metal-semiconductor-metal photodetectors for long wavelength optical communications
Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength ...
Multiple time constant modeling of dispersion dynamics in hetero field-effect transistors
A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model ...
Monolithic integration of a folded dipole antenna with a 24-GHz receiver in SiGe HBT technology
The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...
Fully integrated millimeter-wave VCO with 32 % tuning range
In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 ...
Compact SiGe HBT low noise amplifiers for 3.1 - 10.6 GHz ultra-wideband applications
Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...
A unified approach to charge-conservative capacitance modelling in HEMTs
The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain-capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to ...
OMCVD grown InP/InGaAs heterojunction bipolar transistors
Compact multilayer filter structures for coplanar MMICs
Highly compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT technology
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the ...
The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, ...