Interdigitated metal-semiconductor-metal (MSM) Schottky barrier photodetectors based on the InCaAs-InP material system have been the subject of keen research over the past couple of years for use in long wavelength ...

A new approach to the modeling of frequency dispersion effects encountered in the drain current characteristics of state-of-the-art hetero field-effect transistors is presented. The empirical, equivalent-circuit based model ...

The integration of an on-chip folded dipole antenna with a monolithic 24-GHz receiver manufactured in a 0.8-µm SiGe HBT process is presented. A high-resistivity silicon substrate (1000 cm) is used for the implemented circuit ...

In this paper, the authors present a fully integrated VCO with 32 % tuning range centered at 38.9 GHz. The VCO was designed using a commercially available, inexpensive 0.8 µm Si/SiGe HBT technology with fT and fmax of 80 ...

Two compact SiGe HBT low noise amplifiers for ultra-wideband (UWB) applications are presented. The measured noise figure of the first approach is 2.4 dB at 7 GHz and below 2.9 dB in the UWB bandwidth from 3.1 GHz up to ...

The voltage dependence of high electron mobility transistor (HEMT) gate-source- and gate-drain-capacitance is described by a set of equations based on a unified charge-conservative model approach. The model is applied to ...

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Beam forming and scanning at microwave and millimetre-wave frequencies (1 GHz – 100 GHz) using electronic steerable array (ESA) antennas, requires phase shift and time-delay units. RF path phase shifters provide an attractive ...

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We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the ...