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The impact of layout and technology on the DC and RF performance of AlGaN/GaN HFETs
Konferenzveröffentlichung
An analysis of the impact of device layout and technology on the DC and RF performance of AlGaN/GaN HFETs is presented. For this analysis AlGaN/GaN HFETs fabricated on SiC substrate were extensively characterized by DC, ...
Advanced RF frontend technology using micromachined SiGe (ARTEMIS)
Bericht
An attractive band is the 250 MHz wide 24 GHz ISM band, which is available globally without specific licenses. Bringing systems utilizing the upper microwave range into consumer applications is primarily a question of ...
A compact low-power SiGe:C BiCMOS amplifier for 77-81 GHz automotive radar
Konferenzveröffentlichung
In this paper a single-ended fully integrated Si/SiGe HBT amplifier working at a center frequency of 79 GHz is presented. The amplifier consists of three cascode stages. A trimmable line technique and an efficient DC ...
Highly compact 3.1 - 10.6 GHz UWB LNA in SiGe HBT technology
Konferenzveröffentlichung
We present the design, implementation and measurement of a low noise amplifier (LNA) in a low cost 0.8 mym SiGe hetero-junction bipolar technology (HBT). The measured noise figure is between 2.1 dB and 2.6 dB in the ...
FCC compliant 3.1 - 10.6 GHz UWB pulse radar system using correlation detection
Konferenzveröffentlichung
A short range 3.1 - 10.6 GHz single band ultra-wideband (UWB) pulse radar system is presented. The transmitter consists of a pulse generator that is connected to a broad-band monopole antenna. The generated pulse shape is ...
A fully integrated fully differential low-noise amplifier for short range automotive radar using a SiGe:C BiCMOS technology
Konferenzveröffentlichung
A fully integrated fully differential low-noise amplifier for 79 GHz short range radar applications using a high-speed SiGe:C BiCMOS technology is presented. The integrated circuit uses thin-film microstrip lines and ...
SiGe millimeter-wave dynamic frequency divider with enhanced sensitivity incorporating a transimpedance stage
Konferenzveröffentlichung
A Si/SiGe bipolar dynamic frequency divider designed for 77 GHz/79 GHz automotive radar is presented, which uses a transimpedance amplifier topology to improve sensitivity and operational bandwidth. Capable of operation ...
Millimeter-wave Si/SiGe HBT frequency divider using dynamic and static division stages
Konferenzveröffentlichung
In this paper, the authors present a fully integrated frequency divider with a divide ratio of 32, using a 0.8 um Si/SiGe HBT technology. The divider operates at least up to 40 GHz and shows outstanding performance such ...
Millimeter-wave amplifiers using a 0.8 µm Si/SiGe HBT technology
Konferenzveröffentlichung
The authors present three amplifiers, operating at 36, 40 and 50 GHz implemented in a low-cost 0.8 um Si/SiGe HBT technology which features an fT and fMAX of 80 GHz. Each amplifier shows a high gain, a high isolation and ...
24 and 36 GHz SiGe HBT power amplifiers
Konferenzveröffentlichung
We present in this paper two amplifiers using the SiGe HBT technology, operating at 24 GHz and 36 GHz, respectively. The first amplifier was designed to operate in the 24 GHz ISM band, especially for traffic and automotive ...